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ESD6116
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. PARAMETERS AND MAXIMUM ABSOLUTE OPERATING CONDITIONS
Storage Temperature Range
Operating Temperature Range
Parameter
Rating
? 55 to +150
? 30 to +85
Units
° C
° C
Failing to Nonconductive,
(Notes 1 and 2)
I 2 t (Maximum Ipp Value Using 10/1000 m s Pulse).
100
A
1. The device must not burn to open ? circuit, when the value is below maximum I PP .
2. This parameter is characterized at 25 ° C using an ON Semiconductor ? specific test board.
Table 3 . ELECTRICAL OPERATING CHARACTERISTIC S (Note 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I OFF
V BR
V CL
V F
C L1
Stand ? Off Quiescent Current
Break Down Voltage
Clamping Voltage during Transient
Forward Voltage
Line Capacitance
Stand ? Off Voltage V OFF = 10 V
Break Down Current I BR = 15 mA
Clamping Current I CL = 1 A
(Note 5)
Forward Current I F = 850 mA
V BIAS = 0 V
16
172
500
20
1.3
nA
V
V
V
pF
C L2
V ESD
ESD Protection Peak Discharge
Voltage at any Channel Input
a) Contact Discharge per IEC 61000 ? 4 ? 2 Standard
b) Air Discharge per IEC 61000 ? 4 ? 2 Standard
Minimum Attenuation
Freq = 80 MHz ? 1 Ghz
Freq = 1 ? 4 GHz
V BIAS = 5 V, T A = 25 ° C;
T A = 25 ° C
(Note 4)
R SOURCE = R LOAD = 50 W
T A = 25 ° C
66
± 30
± 30
83
8
20
100
pF
kV
dB
3. All parameters specified for T A = ? 30 ° C to 85 ° C unless otherwise noted.
4. Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W .
5. Transient: 8 x 20 m s current pulse.
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